document number: 74499 www.vishay.com s-81559-rev. b, 23-oct-08 1 automotive dual n-channel 60 v (d-s) 175 c mosfet sq9945aey vishay siliconix features ? trenchfet ? power mosfet ? package with low thermal resistance aec-q101 reliability ? passed all aec-q101 reliability testing ? characterization ongoing notes a. package limited. b. pulse test; pulse width 300 s, duty cycle 2 %. c. when mounted on 1" square pcb (fr-4 material). product summary v ds (v) 60 r ds(on) ( ) at v gs = 10 v 0.080 i d (a) 3.7 configuration dual n-channel mosfet d 1 g 1 s 1 n-channel mosfet d 2 g 2 s 2 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 t o p v iew 2 3 4 1 a v aila b le p b -free rohs* compliant ordering information package so-8 lead (pb)-free SQ9945AEY-T1-E3 snpb sq9945aey-t1 absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 60 v gate-source voltage v gs 20 continuous drain current a t c = 25 c i d - 3.7 a t c = 70 c - 3.2 continuous source current (diode conduction) a i s 2 pulsed drain current b i dm 25 single pulse avalanche energy l = 0.1 mh e as -mj single pulse avalanche current i as -a maximum power dissipation b t c = 25 c p d 2.4 w t a = 70 c 1.7 operating junction and storage temperature range t j , t stg - 55 to + 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja - c/w junction-to-case (drain) r thjc - * pb containing terminations are not rohs compliant, exemptions may apply
www.vishay.com document number: 74499 2 s-81559-rev. b, 23-oct-08 sq9945aey vishay siliconix notes a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subj ect to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t c = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a - - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 - 3.0 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = 60 v - - 1.0 a v gs = 0 v v ds = 60 v - - 10 v gs = 0 v v ds = 60 v, t j = 55 c - - - on-state drain current a i d(on) v gs = 10 v v ds 5 v 20 - - a drain-source on-state resistance a r ds(on) v gs = 10 v i d = 3.7 a - 0.060 0.080 v gs = 10 v i d = 30 a, t j = 125 c - - - v gs = 10 v i d = 30 a, t j = 175 c - - - forward transconductance a g fs v ds = 15 v, i d = 3.7 a - - 11 s dynamic b input capacitance c iss v gs = 0 v v ds = 25 v, f = 1 mhz --- pf output capacitance c oss --- reverse transfer capacitance c rss --- total gate charge c q g v gs = 10 v v ds = 30 v, i d = 3.7 a -1120 nc gate-source charge c q gs -2- gate-drain charge c q gd -2- turn-on delay time c t d(on) v dd = 30 v, r l = 30 i d ? 1 a, v gen = 10 v, r g = 6 -920 ns rise time c t r -1020 turn-off delay time c t d(off) -2140 fall time c t f -820 source-drain diode ratings and characteristics t c = 25 c b pulsed current a i sm ---a forward voltage v sd i f = 85 a, v gs = 0 v - - - v reverse recovery time t rr i f = 2 a, di/dt = 100 a/s -4580ns peak reverse recovery current i rm(rec) ---a reverse recovery charge q rr ---c
document number: 74499 www.vishay.com s-81559-rev. b, 23-oct-08 3 sq9945aey vishay siliconix typical characteristics t a = 25 c, unless otherwise noted output characteristics transconductance capacitance transfer characteristics on-resistance vs. drain current gate charge 0 5 10 15 20 25 012345 v ds - drain-to-source voltage (v) - drain current (a) i d 3 v v gs = 10 thru 5 v 4 v 0 50 100 150 200 250 300 0 204060 8 0 100 120 ) s ( e c n a t c u d n o c s n a r t - g s f i d - drain c u rrent (a) graph to be available upon completion of testin g v ds - drain-to-source voltage (v) c - capacitance (pf) c rss c oss 0 200 400 600 800 0 102030405060 c iss 0 5 10 15 20 25 0123456 v gs - gate-to-source voltage (v) - drain current (a) i d 25 c 150 c t c = - 55 c - on-resistance ( ) r ds(on) i d - drain current (a) 0 0.04 0.08 0.12 0.16 0.20 0 5 10 15 20 25 v gs = 10 v v gs = 4.5 v - gate-to-source voltage (v) q g - total gate charge (nc) v gs 0 2 4 6 8 10 0246810 v ds = 30 v i d = 3.7 a
www.vishay.com document number: 74499 4 s-81559-rev. b, 23-oct-08 sq9945aey vishay siliconix typical characteristics t a = 25 c, unless otherwise noted on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage source drain diode forward voltage drain source breakdown vs. junction temperature t j - junction temperature (c) (normalized) - on-resistance r ds(on) 0 0.4 0.8 1.2 1.6 2.0 2.4 - 50 - 25 0 25 50 75 100 125 150 175 v gs = 10 v i d = 3.7 a - on-resistance ( ) r ds(on) v gs - gate-to-source voltage (v) 0 0.04 0.08 0.12 0.16 0.20 0246810 i d = 3.7 a 0 0.3 0.6 0.9 1.2 1.5 v sd - source-to-drain voltage (v) - source current (a) i s t j = 175 c t j = 25 c 1 10 30 40 44 4 8 52 5 6 - 50 - 25 0 25 50 75 100 125 150 175 t j - j u nction temperat u re (c) ( v ) v ds graph to be available upon completion of testin g
document number: 74499 www.vishay.com s-81559-rev. b, 23-oct-08 5 sq9945aey vishay siliconix thermal ratings t a = 25 c, unless otherwise noted maximum drain current vs. ambient temperature single pulse power, junction-to-ambient avalanche current vs. time threshold voltage safe operating area t c - am b ient temperat u re (c) ) a ( t n e r r u c n i a r d - i d 0 20 40 60 8 0 100 120 0 25 50 75 100 125 150 175 graph to be available upon completion of testin g time (s) power (w) 0 30 60 90 120 0.001 0.01 0.1 1 10 100 1000 t a v (s) 1000 10 0.00001 0.001 0.1 1 0.1 (a) i v a d 0.01 100 1 0.0001 graph to be available upon completion of testin g t j - temperature (c) - 0.9 - 0.6 - 0.3 0.0 0.3 0.6 - 50 - 25 0 25 50 75 100 125 150 175 i d = 250 a variance (v) v gs(th) 1000 10 0.1 1 10 100 0.1 100 ) a ( t n e r r u c n i a r d - i d 1 v ds - drain-to-so u rce v oltage ( v ) * v gs minim u m v gs at w hich r ds(on) is specified graph to be available upon completion of testin g
www.vishay.com document number: 74499 6 s-81559-rev. b, 23-oct-08 sq9945aey vishay siliconix thermal ratings t a = 25 c, unless otherwise noted normalized thermal transient impedance, junction-to-case normalized thermal transient im pedance, junction-to-ambient single pulse avalanche current (peak) vs. time in avalanche s qu are w a v e p u lse d u ration (s) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 e v i t c e f f e d e z i l a m r o n t n e i s n a r t e c n a d e p m i l a m r e h t 1 graph to be available upon completion of testin g square wave pulse duration (s) normalized effective transient thermal impedance 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 110 10 3 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 1. duty cycle, d = 2. per unit base = r thja = 93 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 2 0.01 0.1 1 10 100 1000 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 t a v (s) i as(peak) (a) graph to be available upon completion of testin g
document number: 74499 www.vishay.com s-81559-rev. b, 23-oct-08 7 sq9945aey vishay siliconix thermal ratings t a = 25 c, unless otherwise noted single pulse avalanche current (peak) vs. inductance single pulse avalanche energy (peak) vs. t j(start) repetitive avalanche current (peak) vs. time in avalanche at t a = 25 c 1 10 100 1000 0.1 1 10 100 ind u ctance (mh) i as(peak) (a) graph to be available upon completion of testin g 100 1000 10000 100000 25 50 75 100 125 150 t j(start) (c) e (a v )(peak) (mj) graph to be available upon completion of testin g 0.01 0.1 1 10 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 t a v (s) i ar(peak) (a) graph to be available upon completion of testin g
www.vishay.com document number: 74499 8 s-81559-rev. b, 23-oct-08 sq9945aey vishay siliconix thermal ratings t a = 25 c, unless otherwise noted repetitive avalanche current (peak) vs. time in avalanche at t a = 150 c note the characteristics shown in the six graphs - normalized transient thermal im pedance junction to ambient (25 c) - single pulse avalanche current (peak) vs. time in avalanche - single pulse avalanche curr ent (peak) vs. inductance - single pulse avalanche energy (peak) vs. t j (start) - repetitive avalanche current (p eak) vs. time in avalanche at t a = 25 c - repetitive avalanche current (p eak) vs. time in avalanche at t a = 150 c are given for general guidel ines only to enable the user to get a "ball park" indication of part capabi lities. the data are ext racted from single pulse transient thermal impedance c haracteristics which are developed fr om empirical measurements. the latter is valid for the part m ounted on printed circuit board - fr4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. the part capabilities can wide ly vary depending on actual application paramet ers and operating conditions. vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74499. 0.01 0.1 1 10 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 t a v (s) i ar(peak) (a) graph to be available upon completion of testin g
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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